click to buy information furnished by linear integrated systems and micross components is believed to be accurate and reliable. however, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of linear integrated systems. features ? high ?? gain ? h fe ?? 150 ? @ ? 10a \ 1ma ? tight ? v be ? matching ? |v be1 ? ? ? v be2 ? |= ? 0.2mv ? typ. ? high ? f t ? 250mhz ? typ. ? @ ? 1ma ? absolute ? maximum ? ratings ? 1 ? @ ? 25c ? (unless ? otherwise ? noted) ? maximum ? temperatures ? storage ? temperature ?\ 65c ? to ? +200c ? operating ? junction ? temperature ?\ 55c ? to ? +150c ? maximum ? power ? dissipation ? continuous ? power ? dissipation ? (one ? side) ? 250mw ? continuous ? power ? dissipation ? (both ? sides) ? 500mw ? linear ? derating ? factor ? (one ? side) ? 2.3mw/c ? linear ? derating ? factor ? (both ? sides) ? 4.3mw/c ? maximum ? currents ? collector ? current ? 10ma ? ?? matching ? characteristics ? @ ? 25c ? (unless ? otherwise ? stated) ? symbol ? characteristic ? min ? typ ? max ? units ? conditions ? |v be1 ? ? ? v be2 ? | ? base ? emitter ? voltage ? differential ? \\? 0.4 ? 1 ? mv ? i c ? = ? 10a, ? v ce ? = ? 5v ? ? |(v be1 ? ? ? v be2 )| ? / ?? t ? ? base ? emitter ? voltage ? differential ? change ? with ? temperature ? \\? 1 ? 5 ? v/c ? i c ? = ? 10a, ? v ce ? = ? 5v ? t a ? = ?\ 55c ? to ? +125c ? |i b1 ? ? ? i b2 ? | ? base ? current ? differential ? \\? \\? 10 ? na ? i c ? = ? 10a, ? v ce ? = ? 5v ? | ?? (i b1 ? ? ? i b2 )|/c ? base ? current ? differential ? ? change ? with ? temperature ? \\? \\? 0.5 ? na/c ? i c ? = ? 10a, ? v ce ? = ? 5v ? t a ? = ?\ 55c ? to ? +125c ? h fe1 ? /h fe2 ? dc ? current ? gain ? differential ? \\? 5 ? \\? % ? i c ? = ? 10a, ? v ce ? = ? 5v ? ? electrical ? characteristics ? @ ? 25c ? (unless ? otherwise ? noted) symbol ? characteristics ? min. ? typ. ? max. ? units ? conditions ? bv cbo ? collector ? to ? base ? voltage ? 45 ? \\? \\? v ? i c ? = ? 10a, ? i e ? = ? 0 ? bv ceo ? collector ? to ? emitter ? voltage ? 45 ? \\? \\? v ? i c ? = ? 10a, ? i b ? = ? 0 ? bv ebo ? emitter \ base ? breakdown ? voltage ? 6.2 ? \\? \\? v ? i e ? = ? 10a, ? i c ? = ? 0 2 ? bv cco ? collector ? to ? collector ? voltage ? 100 ? \\? \\? v ? i c ? = ? 10a, ? i e ? = ? 0 ? ? h fe ? ? dc ? current ? gain ? 150 ? \\? \\? ? i c ? = ? 10a, ? v ce ? = ? 5v ? 150 ? \\? \\? ? i c ? = ? 100a, ? v ce ? = ? 5v ? 150 ? \\? \\? ? i c ? = ? 1ma, ? v ce ? = ? 5v ? v ce (sat) ? collector ? saturation ? voltage ? \\? \\? 0.25 ? v ? i c ? = ? 1ma, ? i b ? = ? 0.1ma ? i ebo ? emitter ? cutoff ? current ? \\? \\? 0.2 ? na ? i e ? = ? 0, ? v cb ? = ? 3v ? i cbo ? collector ? cutoff ? current ? \\? \\? 0.2 ? na ? i e ? = ? 0, ? v cb ? = ? 30v ? c obo ? output ? capacitance ? \\? \\? 2 ? pf ? i e ? = ? 0, ? v cb ? = ? 5v ? c c1c2 ? collector ? to ? collector ? capacitance ? \\? \\? 2 ? pf ? v cc ? = ? 0v ? i c1c2 ? collector ? to ? collector ? leakage ? current ? \\? \\? 0.5 ? na ? v cc ? = ? 45v ? f t ? current ? gain ? bandwidth ? product ? 200 ? \\? \\? mhz ? i c ? = ? 1ma, ? v ce ? = ? 5v ? nf ? narrow ? band ? noise ? figure ? \\? \\? 3 ? db ? i c ? = ? 100a, ?? v ce ? = ? 5v, ? bw=200hz, ? r g = ? 10k , ?? f ? = ? 1khz ? notes: ? 1. ? absolute ? maximum ? ratings ? are ? limiting ? values ? above ? which ? serviceability ? may ? be ? impaired 2. ? the ? reverse ? base \ to \ emitter ? voltage ? must ? never ? exceed ? 6.2 ? volts; ? the ? reverse ? base \ to \ emitter ? current ? must ? never ? exceed ? 10a. ? ? ? ? ? LS311 monolithic dual npn transistor LS311 features: ? very high gain ? tight matching ? low output capacitance the LS311 is a monolithic pair of npn transistors mounted in a single p-dip package. the monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching. the 8 pin p-dip provides ease of manufacturing, and the symmetrical pinout prev ents improper orientation. (see packaging information). linear s y stems hi g h volta g e su p e r -beta monolithic dual npn available packages: LS311 in p-dip LS311 available as bare die please contact micross for fu ll package and die dimensions: email: chipcomponents@micross.com web: www.micross.com/distribution.aspx p-dip (top view)
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